Multilayer MoTe <sub>2</sub> Field?Effect Transistor at High Temperatures

نویسندگان

چکیده

Functional 2D material-based devices are likely subjected to high ambient temperatures when integrated into miniaturized circuits for practical applications, which may induce irreversible structural changes in materials and impact the device performance. However, majority of devices’ studies focus on room temperature or low-temperature operation conditions. Here, high-temperature (up 673 K) electro-thermal response molybdenum ditelluride (MoTe2)-based field-effect transistors is investigated. The optimal annealing around 500–525 K multilayer MoTe2 with two-fold enhancement maximum current level, mobility, on-off ratio identified. Furthermore, show transition electrical from gate modulation degenerately p-doped (hole dominant) characteristics increases ?600 K. gate-dependent measurements complemented by surface chemistry analysis confirm near range hopping transport channel at induced thermally triggered oxidation MoTe2. These results not only provide thermal endurance limits but also indicate possible applications sensing applications.

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ژورنال

عنوان ژورنال: Advanced Materials Interfaces

سال: 2021

ISSN: ['2196-7350']

DOI: https://doi.org/10.1002/admi.202100950